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Plasma Enhanced Chemical Vapor
Deposition Systems are normally used for depositing dielectric
layers of Silicon Dioxide and Silicon Nitride onto substrates.
Conducting layers of Amorphous Silicon are also produced in these
systems.
Key Benefits
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Computer operation guarantees
identical process parameters from run to run. |
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Data logging for every
automatic run (event driven). |
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Store limitless number of
recipes (.rcp files). |
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Chambers available in
Anodized Aluminum or Stainless Steel. |
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Water cooled upper electrode,
chamber and baseplate. |
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Aluminum Oxide (ceramic)
insulator. |
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Add purging cycles if you
wish. |
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+ or - 5% uniformity
guarantee. |
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Process support available. |
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System includes direct drive
mechanical pump (14 cfm) with all connecting fittings. |
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Choice of high frequency
(13.56 MHz) or low frequency(40 KHz) power supplies. |
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Options: Down Stream Pressure
Control, Roots Blower Pumping, Scrubber, Oil Filtration, Floor
Model Cabinets and additional AFC's (Call for pricing). |
Models
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Description |
MODEL # |
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12" Al. Chamber, w/4 AFC's ,
Low Freq. RF |
SC-PECVD-A12-4-LF |
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12" SS Chamber, w/4 AFC's ,
Low Freq. RF |
SC-PECVD-SS12-4-LF |
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16" Al. Chamber, w/4 AFC's,
Low Freq. RF |
SC-PECVD-A16-4-LF |
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16" SS Chamber, w/4 AFC's,
Low Freq. RF |
SC-PECVD-SS16-4-LF |
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12" Al. Chamber, w/4 AFC's ,
High Freq. RF |
SC-PECVD-A12-4-HF |
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12" SS Chamber, w/4 AFC's ,
High Freq. RF |
SC-PECVD-SS12-4-HF |
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16" Al. Chamber, w/4 AFC's,
High Freq. RF |
SC-PECVD-A16-4-HF |
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16" SS Chamber, w/4 AFC's,
High Freq. RF |
SC-PECVD-SS16-4-HF |
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