Deposition Techniques

Key of Symbols
CCarbonInclInconelExExcellentPPoorRFRF sputtering is effective*Influenced by composition
GrGraphiteVCVitreous carbonGGoodSSublimesRF-RReactive RF sputter is effective**Cr-plated rod or strip
QQuartzSSStainless SteelFFairDDecomposes***All metals alumina coated
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Material
Symbol
MP
(°C)
S/D
g/cm3
Temp.(°C) for Given
Vap. Press. (Torr)
Evaporation Techniques
Sputter
Comments
10-8
10-6
10-4
E-Beam
Thermal Sources
Boat
Coil
Basket
Crucible
AluminumAl660—2.76778211,010Ex——WTiB2-BN, ZrB2, BNDCAlloys W/Mo/Ta. Flash evap or use BN crucible.
Aluminum AntimonideAlSb1,080—4.3————————RF
Aluminum ArsenideAlAs1,600—3.7——~ 1,300—————RF
Aluminum BromideAlBr397—2.64——~ 50—Mo——Gr—
Aluminum CarbideAl4C3~1,400D2.36——~ 800F————RFn = 2.7
Aluminum FluorideAlF31,291S2.88410490700PMo, W, Ta——GrRF
Aluminum NitrideAlN>2,200S3.26——~1,750F————RF-RDecomposes. Reactive evap in 10-3 T N2 with glow discharge.
Aluminum OxideAl2O32,072—3.97——1,550ExW—W—RF-RSapphire excellent in E-beam; forms smooth, hard films. n = 1.66
Aluminum PhosphideAlP2,000—2.42————————RF
Aluminum, 2% CopperAl2%Cu640—2.82————————DCWire feed & flash. Difficult from dual sources.
Aluminum, 2% SiliconAl2%Si640—2.69——1,010————TiB2-BNRF, DCWire feed & flash. Difficult from dual sources.
AntimonySb630S6.68279345425PMo*** Ta***Mo, TaMo, TaBN, C, Al2O3RF, DCEvaporates well
Antimony OxideSb2O3656S5.2——~300GPt—PtBN, Al2O3RF-RDecomposes on W. n = 2.09, 2.18, 2.35
Antimony SelenideSb2Se3611————–—Ta——CRFStoichiometry variable.
Antimony SulfideSb2S3550—4.64——~200GMo, Ta—Mo, TaAl2O3—No decomposition. n=3.19, 4.06, 4.3
Antimony TellurideSb2Te3629—6.5——600————CRFDecomposes over 750° C
ArsenicAs817S5.73107150210PC——Al2O3, BeO, VC—Sublimes rapidly at low temp.
Arsenic OxideAs2O3312—3.74—————————
Arsenic SelenideAs2Se3~360—4.75———————Al2O3, QRF
Arsenic SulfideAs2S3300—3.43——~400FMo——Al2O3, QRFn = 2.4, 2.81, 3.02
Arsenic TellurideAs2Te3362——————Flash————See JVST. 1973;10:748
BariumBa725—3.51545627735FW, Ta, MoWWMetalsRFWets without alloying; reacts with ceramics
Barium ChlorideBaCl2963—3.92——~650—Ta, Mo———RFPreheat gently to outgas. n = 1.73
Barium FluorideBaF21,355S4.89——~700GMo———RFn = 1.47
Barium OxideBaO1,918—5.72——~1,300PPt—PtAl2O3RF, RF-RDecomposes slightly. n = 1.98
Barium SulfideBaS1,200—4.25——1,100—Mo———RFn = 2.16
Barium TitanateBaTiO3—D6.02————————RFGives Ba. Co-evap. from 2 sources or
BerylliumBe1,278—1.857108781,000ExW, TaWWBeO, C, VCDCWets W/Mo/Ta. Evaporates easily
Beryllium CarbideBe2C>2,100D1.9—————————
Beryllium ChlorideBeCl2405—1.9——~150—————RF
Beryllium FluorideBeF2800S1.99——~200G—————n = <1.33
Beryllium OxideBeO2,530—3.01——1,900G——W—RF, RF-RNo decomposition from E-beam guns. n=1.72
BismuthBi271—9.8330410520ExW, Mo, TaWWAl2O3, VCDCResistivity high.
Bismuth FluorideBiF3727S5.32——~300————GrRFn = 1.74
Bismuth OxideBi2O3860—8.55——~1,400PPt—Pt—RF, RF-Rn = 1.91
Bismuth SelenideBi2Se3710D6.82——~650G———Gr, QRFCo-evap from 2 sources or sputter
Bismuth SulfideBi2S3685D7.39——–—————RFn = 1.34, 1.46
Bismuth TellurideBi2Te3573—7.7——~600—W, Mo——Gr, QRFCo-evap from 2 sources or sputter
Bismuth TitanateBi2Ti2O7—D———–—————RFSputter or co-evap from 2 sources in 10-2 Torr O2
BoronB2,079—2.341,2781,5481,797ExC——C, VCRFExplodes with rapid cooling. Forms carbide with container
Boron CarbideB4C2,350—2.522,5002,5802,650Ex————RFSimilar to chromium.
Boron NitrideBN~3,000S2.25——~1,600P————RF, RF-RDecomposes when sputtered; Reactive preferred
Boron OxideB2O3~450—1.81——~1,400GPt, Mo————n = 1.48
Boron SulfideB2S3310—1.55——800————GrRF
CadmiumCd321—8.6464120180PW, Mo, Ta—W, Mo, TaAl2O3, QDC,RFBad for vacuum systems. Low sticking coefficient.
Cadmium AntimonideCd3Sb2456—6.92—————————
Cadmium ArsenideCd3As2721—6.21———————QRF
Cadmium BromideCdBr2567—5.19——~300——————
Cadmium ChlorideCdCl2568—4.05——~400——————
Cadmium FluorideCdF21,100—6.64——~500—————RFn = 1.56
Cadmium IodideCdI2387—5.67——~250——————
Cadmium OxideCdO>1,500D6.95——~530—————RF-RDisproportionates. n = 2.49
Cadmium SelenideCdSe>1,350S5.81——540GMo, Ta——Al2O3, QRFEvaporates easily. n = 2.4
Cadmium SulfideCdS1,750S4.82——550FW, Mo, Ta—WAl2O3, QRFSticking coefficient affected by substrate
Cadmium TellurideCdTe1,121—5.85——450—W, Mo, TaWW, Ta, Mo—RFStoichiometry depends on substrate temp. n~2.6
CalciumCa839S1.54272357459PWWWAl2O3, Q—Corrodes in air.
Calcium FluorideCaF21,423—3.18——~1,100—W, Mo, TaW, Mo, TaW, Mo, TaQRFRate control important. Preheat gently to outgas. n = 1.43
Calcium OxideCaO2,614—~3.3——~1,700—W, Mo——ZrO2RF-RForms volatile oxides with W/Mo.
Calcium SilicateCaSiO31,540—2.91———G———QRFn = 1.61, 1.66
Calcium SulfideCaS—D2.5——1,100—Mo———RFDecomposes. n = 2.14
Calcium TitanateCaTiO31,975—4.11,4901,6001,690P————RFDisproportionates except in sputtering. n = 2.34
Calcium TungstateCaWO4——6.06———GW———RFn = 1.92
CarbonC~3,652S1.8–2.11,6571,8672,137Ex————PDCE-beam preferred. Arc evaporation. Poor film adhesion.
CeriumCe798—~6.709701,1501,380GW, TaWW, TaAl2O3, BeO, VCDC, RF
Cerium (III) OxideCe2O31,692—6.86———FW————Alloys with source. Use 0.015″–0.020″ W boat. n = 1.95
Cerium (IV) OxideCeO2~2,600—7.131,8902,0002,310GW———RF, RF-RVery little decomposition.
Cerium FluorideCeF31,460—6.16——~900GW, Mo, Ta—Mo, Ta—RFPreheat gently to outgas. n ~ 1.7
CesiumCs28—1.88-162280—SS——Q—
Cesium BromideCsBr636—3.04——~400—W———RFn = 1.70
Cesium ChlorideCsCl645—3.99——~500—W———RFn = 1.64
Cesium FluorideCsF682—4.12——~500—W———RFn = 1.48
Cesium HydroxideCsOH272—3.68——550—Pt————
Cesium IodideCsI626—4.51——~500—W——Pt, QRFn = 1.79
ChioloteNa5Al3F14——2.9——~800—Mo, W———RFn = 1.33
ChromiumCr1,857S7.28379771,157G**WWVCDCFilms very adherent. High rates possible.
Chromium BorideCrB2,760(?)—6.17————————RF
Chromium BromideCrBr2842—4.36——550—Incl———RF
Chromium CarbideCr3C21,980—6.68——~2,000FW———RF
Chromium ChlorideCrCl2824—2.88——550—Fe, Incl———RF
Chromium OxideCr2O32,266—5.21——~2,000GW, Mo—W—RF, RF-RDisproportionates to lower oxides; reoxidizes at 600° C in air. n = 2.55
Chromium SilicideCrSi21,490—5.5————————RF
Chromium-Silicon MonoxideCr-SiO—S****GW—W—RFFlash evaporate
Cobalt BromideCoBr2678D4.91——400—Incl———RF
Cobalt ChlorideCoCl2724D3.36——472—Incl———RF
Cobalt OxideCoO1,795—6.45————————DC-R, RF-RSputter preferred.
Cobalt°Co1,495—8.98509901,200ExW, Nb—WAl2O3, BeODCAlloys with W/Te/Mo
CopperCu1,083—8.927278571,017ExMoWWAl2O3, Mo, TaDCAdhesion poor. Use interlayer (Cr). Evaporates using any source material.
Copper ChlorideCuCl430—4.14——~600—————RFn = 1.93
Copper OxideCu2O1,235S6——~600GTa——Al2O3DC-R, RF-Rn = 2.71
Copper SulfideCu2S1,100—5.6—————————
CryoliteNa3AlF61,000—2.91,0201,2601,480ExW, Mo, Ta—W, Mo, TaVCRFLarge chunks reduce spitting Little decomposition
DysprosiumDy1,412—8.55625750900GTa———DC
Dysprosium FluorideDyF31,360S———~800GTa———RF
Dysprosium OxideDy2O32,340—7.81——~1,400—Ir———RF, RF-RLoses oxygen.
ErbiumEr1,529S9.07650775930GW, Ta———DC
Erbium FluorideErF31,350————~750—Mo———RFSee JVST. 1985; A3(6):2320.
Erbium OxideEr2O3——8.64——~1,600—Ir———RF, RF-RLoses oxygen
EuropiumEu822S5.24280360480FW, Ta——Al2O3DCLow Te solubility
Europium FluorideEuF21,380—6.5——~950—Mo———RF
Europium OxideEu2O3——7.42——~1,600GIr, Ta, W——ThO2RF, RF-RLoses oxygen. Films clear and hard.
Europium SulfideEuS——5.75——–G————RF
Gadolinium CarbideGdC2—————1,500————CRFDecomposes under sputtering
Gadolinium OxideGd2O32,330—7.41———FIr———RF, RF-RLoses oxygen
Gadolinium°Gd1,313—7.97609001,175ExTa——Al2O3DCHigh Te solubility
GalliumGa30—5.9619742907G———Al2O3, BeO, Q—Alloys with W/Te/Mo. Use E-beam gun.
Gallium AntimonideGaSb710—5.6———FW, Ta———RFFlash evaporate
Gallium ArsenideGaAs1,238—5.3———GW, Ta——CRFFlash evaporate
Gallium NitrideGaN800S6.1——~200————Al2O3RF, RF-REvaporate Ga in 10-3 Torr N2
Gallium OxideGa2O31,900—6.44————Pr, W———RFLoses oxygen. n = 1.92
Gallium PhosphideGaP1,540—4.1—770920—W, Ta—WQRFDoes not decompose. Rate control important.
GermaniumGe937—5.358129571,167ExW, C, Ta——Q, Al2O3DCExcellent films from E-beam
Germanium (II) OxideGeO710S———500————QRFn = 1.61
Germanium (III) OxideGeO21,086—6.24——~625GTa, Mo—W, MoQ, Al2O3RF-RSimilar to SiO; film predominantly GeO
Germanium NitrideGe3N2450S5.2——~650—————RF-RSputtering preferred
Germanium TellurideGeTe725—6.2——381—W, Mo—WQ, Al2O3RF
Glass, Schott® 8329———2.2———Ex————RFEvaporable alkali glass. Melt in air before evaporating.
GoldAu1,064—19.328079471,132ExW***, Mo***, W——Al2O3, BN, VC, WDCFilms soft; not very adherent.
HafniumHf2,227—13.312,1602,2503,090G————DC
Hafnium BorideHfB23,250—10.5————————DC, RF
Hafnium CarbideHfC~3,890S12.2——~2,600—————RF
Hafnium NitrideHfN3,305——————————RF, RF-R
Hafnium OxideHfO22,758—9.68——~2,500FW———RF, RF-RFilm HfO
Hafnium SilicideHfSi21,750—7.2————————RF
HolmiumHo1,474—8.8650770950GW, TaWW——
Holmium FluorideHoF31,143————~800————QDC, RF
Holmium OxideHo2O32,370—8.41————Ir———RF, RF-RLoses oxygen
InconelNi/Cr/Fe1,425—8.5———GWWW—DCUse fine wire wrapped on W Low rate required for smooth films
IndiumIn157—7.3487597742ExW, Mo—WGr, Al2O3DCWets W and Cu. Use Mo liner.
Indium (I) OxideIn2O~600S6.99——650—————RFDecomposes under sputtering
Indium (I) SulfideIn2S653—5.87——650————GrRF
Indium (II) SulfideInS692S5.18——650————GrRF
Indium (II) TellurideInTe696—6.29—————————
Indium (III) OxideIn2O3850—7.18——~1,200GW, Pt——Al2O3—
Indium (III) SulfideIn2S31,050S4.9——850————GrRFFilm In2S
Indium (III) TellurideIn2Te3667—5.78————————RFSputtering preferred; or co-evaporate from 2 sources; flash
Indium AntimonideInSb535—5.8————W———RFDecomposes. Sputter preferred; or co-evaporate.
Indium ArsenideInAs943—5.7780870970—W———RF
Indium NitrideInN1,200—7—————————
Indium PhosphideInP1,070—4.8—630730—W, Ta—W, TaGrRFDeposits are P rich
Indium SelenideIn2Se3890—5.67————————RFSputtering preferred; or co-evaporate from 2 sources; flash
Indium Tin OxideIn2O3–SnO21,800S——————————
IridiumIr2,410—22.421,8502,0802,380F———ThO2DC
Iron (II) OxideFeO1,369—5.7———P————RF, RF-RDecomposes; sputtering preferred. n=2.32
Iron (III) OxideFe2O31,565—5.24———GW—W——Disproportionates to Fe3O4 at 1,530° C. n = 3.01
Iron Bromide2-Feb684D4.64——561————FeRF
Iron ChlorideFeCl2670S3.16——300————FeRFn = 1.57
Iron IodideFeI2——5.32——400————FeRF
Iron SulfideFeS1,193D4.74———————Al2O3RFDecomposes
Iron°Fe1,535—7.868589981,180ExWWWAl2O3, BeODCAttacks W. Films hard, smooth. Preheat gently to outgas.
KanthalFeCrAl——7.1————WWW—DC
LanthanumLa921—6.159901,2121,388ExW, Ta——Al2O3RFFilms will burn in air if scraped
Lanthanum BorideLaB62,210D2.61———G————RF
Lanthanum BromideLaBr3783—5.06——————Ta—RFHygroscopic. n=1.94
Lanthanum FluorideLaF31,490S~6.0——900GTa, Mo—Ta—RFNo decomposition. n ~1.6
Lanthanum OxideLa2O32,307—6.51——1,400GW, Ta———RFLoses oxygen. n~1.73
LeadPb328—11.34342427497ExW, MoWW, TaAl2O3, QDC
Lead BromidePbBr2373—6.66——~300——————
Lead ChloridePbCl2501—5.85——~325—Pt——Al2O3RFLittle decomposition
Lead FluoridePbF2855S8.24——~400—W, Pt, Mo——BeORFn = 1.75
Lead IodidePbI2402—6.16——~500—Pt——Q—
Lead OxidePbO886—9.53——~550—Pt——Q, Al2O3RF-RNo decomposition. n ~2.6
Lead SelenidePbSe1,065S8.1——~500—W, Mo—WGr, Al2O3RF
Lead StannatePbSnO31,115—8.1670780905PPt—PtAl2O3RFDisproportionates
Lead SulfidePbS1,114S7.5——500—W—W, MoQ, Al2O3RFLittle decomposition. n = 3.92
Lead TelluridePbTe917—8.167809101,050—Mo, Pt, Ta——Al2O3, GrRFDeposits are Te rich. Sputtering preferred;
Lead TitanatePbTiO3——7.52————Ta———RF
LithiumLi181—0.53227307407GTa, SS——Al2O3, BeO—Metal reacts quickly in air
Lithium BromideLiBr550—3.46——~500—Ni———RFn = 1.78
Lithium ChlorideLiCl605—2.07——400—Ni———RFPreheat gently to outgas. n = 1.66
Lithium FluorideLiF845—2.648751,0201,180GNi, Ta, Mo, W——Al2O3RFRate control important for optical films. Preheat gently to outgas. n = 1.39
Lithium IodideLiI449—4.08——400—Mo, W———RFn = 1.96
Lithium OxideLi2O>1,700—2.01——850—Pt, Ir———RFn = 1.64
LutetiumLu1,663—9.84——1,300ExTa——Al2O3RF, DC
Lutetium OxideLu2O3——9.42——1,400—Ir———RFDecomposes
MagnesiumMg649S1.74185247327GW, Mo, Ta, CbWWAl2O3, VCDCExtremely high rates possible
Magnesium AluminateMgAl2O42,135—3.6———G————RFNatural spinel. n = 1.72
Magnesium BromideMgBr2700—3.72——~450—Ni———RFDecomposes.
Magnesium ChlorideMgCl2714—2.32——400—Ni———RFDecomposes. n = 1.67
Magnesium FluorideMgF21,261—2.9–3.2——1,000ExMo, Ta——Al2O3RFRate control and substrate heat important for Excellent with Mo. n = 1.38
Magnesium IodideMgI2<637D4.43——200—Ir———RF
Magnesium OxideMgO2,852—3.58——1,300G———C, Al2O3RF, RF-REvaporates in 10-3 Torr O2 for stoichiometry.
ManganeseMn1,244S7.2507572647GW, Ta, MoWWAl2O3, BeODC
Manganese (III) OxideMn2O31,080—4.5—————————
Manganese (IV) OxideMnO2535—5.03———PW—W—RF-RLoses oxygen at 535° C
Manganese BromideMnBr2—D4.39——500—Incl———RF
Manganese ChlorideMnCl2650—2.98——450—Incl———RF
Manganese SulfideMnS—D3.99——1,300—Mo———RFDecomposes. n = 2.70
MercuryHg-3913.55-68-42-6——————
Mercury SulfideHgS584S8.1——250————Al2O3RFDecomposes. n = 2.85, 3.20
MolybdenumMo2,617—10.21,5921,8222,117Ex————DCFilms smooth, hard. Careful degas required.
Molybdenum BorideMoB22,100—7.12———P————RF
Molybdenum CarbideMo2C2,687—8.9———F————RFEvaporation of Mo(CO)6 yields Mo2C.
Molybdenum DisulfideMoS21,185—4.8——~50—————RF
Molybdenum OxideMoO3795S4.69——~900—Mo, Pt—MoAl2O3, BNRFSlight oxygen loss. n = 1.9
Molybdenum SilicideMoSi22,050—6.31————W———RFDecomposes
NeodymiumNd1,021—7.017318711,062ExTa——Al2O3DCLow W solubility
Neodymium FluorideNdF31,410—6.5——~900GMo, W—Mo, TaAl2O3RFVery little decomposition. n = 1.6
Neodymium OxideNd2O3~1,900—7.24——~1,400GTa, W——ThO2RF, RF-RLoses oxygen; films clear. E-beam preferred. n = 1.79
Nichrome IV®Ni/Cr1,395—8.58479871,217Ex***WW, TaAl2O3, VC, BeODCAlloys with W/Te/Mo
Nickel BromideNiBr2963S5.1——362—Incl———RF
Nickel ChlorideNiCl21,001S3.55——444—Incl———RF
Nickel OxideNiO1,984—6.67——~1,470————Al2O3RF-RDissociates on heating. n = 2.18
Nickel°Ni1,453—8.99271,0721,262ExWWWAl2O3, BeO, VCDCAlloys with W/Te/Mo. Smooth adherent films
Nimendium°Ni3%Mn1,425—8.8————————DC
NiobiumNb2,468—8.571,7281,9772,287ExW———DCAttacks W source. n = 1.80
Niobium (II) OxideNbO——7.3——1,100—Pt———RF
Niobium (III) OxideNb2O31,780—7.5————W—W—RF, RF-R
Niobium (V) OxideNb2O51,485—4.47————W—W—RF, RF-Rn = 1.95
Niobium BorideNbB22,900—6.97————————RF
Niobium CarbideNbC3,500—7.6———F————RF
Niobium NitrideNbN2,573—8.4————————RF, RF-RReactive. Evaporates Nb in 10-3 Torr N2
Niobium TellurideNbTeX——7.6————————RFComposition variable
Niobium-TinNb3Sn——————Ex————DCCo-evaporate from two sources
OsmiumOs3,045—22.482,1702,4302,760F————DC
Osmium OxideOs2O3—D——————————Deposits Os in 10-3 Torr O2
PalladiumPd1,554S12.028429921,192ExW*WWAl2O3, BeODCAlloys with refractory metals.
Palladium OxidePdO870—9.7——575————Al2O3RF-RDecomposes
ParyleneC8H8300–400—1.1—————————Vapor-depositable plastic
Permalloy®°Ni/Fe1,395—8.79471,0471,307GW——Al2O3, VCDCFilm low in Ni
PhosphorusP44.1—1.82327361402————Al2O3—Material reacts violently in air. n = 2.14
Phosphorus NitrideP3N5——2.51————————RF, RF-R
PlatinumPt1,772—21.451,2921,4921,747ExWWWC, ThO2DCAlloys with metals. Films soft, poor adhesion.
Platinum OxidePtO2450—10.2————————RF-R
PlutoniumPu641—19.84————W————
PoloniumPo254—9.4117170244————Q—
PotassiumK63—0.862360125—Mo——Q—Metal reacts rapidly in air. Preheat gently outgas.
Potassium BromideKBr734—2.75——~450—Ta, Mo——QRFPreheat gently to outgas. n = 1.559
Potassium ChlorideKCl770S1.98——510GTa, Ni———RFPreheat gently to outgas. n = 1.49
Potassium FluorideKF858—2.48——~500————QRFPreheat gently to outgas. n = 1.363
Potassium HydroxideKOH360—2.04——~400—Pt————Preheat gently to outgas
Potassium IodideKI681—3.13——~500—Ta———RFPreheat gently to outgas. n = 1.677
PraseodymiumPr931—6.778009501,150GTa———DC
Praseodymium OxidePr2O3—D7.07——1,400GIr——ThO2RF, RF-RLoses oxygen
RadiumRa700—5 (?)246320416——————
RheniumRe3,180—20.531,9282,2072,571P————DC
Rhenium OxideReO3—D~7————————RFEvaporate Re in 10-3 Torr O2
RhodiumRh1,966—12.41,2771,4721,707GWWWThO2, VCDCE-beam gun preferred
RubidiumRb39—1.48-337111————Q—
Rubidium ChlorideRbCl718—2.09——~550————QRFn = 1.493
Rubidium IodideRbI647—3.55——~400————QRFn = 1.647
RutheniumRu2,310—12.31,7801,9902,260PW———DC
SamariumSm1,074—7.52373460573GTa——Al2O3DC
Samarium OxideSm2O32,350—8.35———GIr——ThO2RF, RF-RLoses oxygen. Films smooth, clear.
Samarium SulfideSm2S31,900—5.73———G—————
ScandiumSc1,541—2.997148371,002ExW——Al2O3, BeORFAlloys with Ta.
Scandium OxideSc2O32,300—3.86——~400F————RF, RF-R
SeleniumSe217—4.8189125170GW, MoW, MoW, MoAl2O3, VC—Bad for vacuum systems. High V.P.
SiliconSi1,410—2.329921,1471,337FW, Ta——BeO, Ta, VCDC, RFAlloys with W; use heavy W boat. SiO produced
Silicon (II) OxideSiO>1,702S2.13——850FTaWWTaRF, RF-RFor resistance evaporation, use baffle box and low rate. n = 1.6
Silicon (IV) OxideSiO21,610—~2.65**1,025*Ex———Al2O3RFQuartz excellent in E-beam. n = 1.544, 1.553
Silicon BorideSiB6——————P————RF
Silicon CarbideSiC~2,700S, D3.22——1,000—————RFSputtering preferred. n = 2.654, 2.697
Silicon NitrideSi3N41,900—3.44——~800—————RF, RF-R
Silicon SelenideSiSe—————550————QRF
Silicon SulfideSiS940S1.85——450————QRFn = 1.853
Silicon TellurideSiTe2——4.39——550————QRF
SilverAg962—10.58479581,105ExWMoTa, MoAl2O3, WDC
Silver BromideAgBr432D6.47——~380—Ta——QRFn = 2.253
Silver ChlorideAgCl455—5.56——~520—Mo, Pt—MoQRFn = 2.07
Silver IodideAgI558—6.01——~500—Ta———RFn = 2.21
SodiumNa98—0.9774124192—Ta, SS——Q—Preheat gently to outgas. Metal reacts quickly in air. n = 4.22
Sodium BromideNaBr747—3.2——~400————QRFPreheat gently to outgas. n = 1.641
Sodium ChlorideNaCl801—2.17——530GTa, W, Mo——QRFCopper oven; little decomposition Preheat gently to outgas. n = 1.544
Sodium CyanideNaCN564————~550—Ag———RFPreheat gently to outgas. n = 1.452
Sodium FluorideNaF993—2.56——~1,000GMo, Ta, W——BeORFPreheat gently to outgas. No decomposition. n = 1.336
Sodium HydroxideNaOH318—2.13——~470—Pt————Preheat gently to outgas. n = 1.358
SpinelMgAI2O4——8———G————RFn = 1.72
StrontiumSr769—2.6239309403PW, Ta, MoWWVCRFWets but does not alloy with W/Te/Mo. May react in air.
Strontium ChlorideSrCl2875—3.05—————————n = 1.650
Strontium FluorideSrF21,473—4.24——~1,000————Al2O3RFn = 1.442
Strontium OxideSrO2,430S4.7——1,500—Mo——Al2O3RFReacts with W/Mo. n = 1.810
Strontium SulfideSrS>2,000—3.7————Mo———RFDecomposes. n = 2.107
SulfurS113—2.07131957PW—WQ—Bad for vacuum systems. n = 1.957
Supermalloy®°Ni/Fe/Mo1,410—8.9———G————DCSputtering preferred; or co-evaporate from 2 sources-Ni/Fe and Mo
TantalumTa2,996—16.61,9602,2402,590Ex————DCForms good films
Tantalum BorideTaB23,000(?)—11.15————————RF
Tantalum CarbideTaC3,880—13.9——~2,500—————RF
Tantalum NitrideTaN3,360—16.3————————RF, RF-REvaporate Ta in 10-3 Torr N2
Tantalum PentoxideTa2O51,872—8.21,5501,7801,920GTaWWVCRF, RF-RSlight decomposition. Evaporate Te in 10-3 Torr O2. n = 2.6
Tantalum SulfideTaS2>1,300——————————RF
TechnetiumTc2,200—11.51,5701,8002,090——————
Teflon®PTFE330—2.9————W———RFBaffled source. Film structure doubtful.
TelluriumTe449—6.25157207277PW, TaWW, TaAl2O3, QRFWets without alloying. n =1.002
TerbiumTb1,356—8.238009501,150ExTa——Al2O3RF
Terbium FluorideTbF31,172————~800—————RF
Terbium OxideTb2O32,387—7.87——1,300—Ir———RFPartially decomposes
Terbium PeroxideTb4O7—D—————Ta———RFFilms TbO
ThalliumTl304—11.85280360470PW, Ta—WAl2O3, QDCWets freely
Thallium BromideTlBr480S7.56——~250—Ta——QRFn = 2.4 – 2.8
Thallium ChlorideTlCl430S7——~150—Ta——QRFn = 2.247
Thallium IodideTlI440S7.1——~250————QRFn = 2.78
Thallium OxideTl2O2717—10.19——350—————RFDisproportionates at 850° C to Tl2O
ThoriumTh1,750—11.71,4301,6601,925ExW, Ta, MoWW——
Thorium BromideThBr4610S5.67————Mo————n=2.47
Thorium CarbideThC22,655—8.96——~2,300————CRF
Thorium FluorideThF4>900—6.32——~750FMo—WVCRF
Thorium OxideThO23,220—9.86——~2,100GW———RF, RF-R
Thorium OxyfluorideThOF2900—9.1————Mo, Ta————n = 1.52
Thorium SulfideThS21,925—7.3————————RFSputtering preferred; or co-evaporate from 2 sources
ThuliumTm1,545S9.32461554680GTa——Al2O3DC
Thulium OxideTm2O3——8.9——1,500—Ir———RFDecomposes
TinSn232—7.28682807997ExMoWWAl2O3DCWets Mo low sputter power. Use Ta liner in E-beam guns.
Tin OxideSnO21,630S6.95——~1,000ExWWWQ, Al2O3RF, RF-RFilms from W are oxygen deficient; oxidize in air. n = 2.0
Tin SelenideSnSe861—6.18——~400G———QRF
Tin SulfideSnS882—5.22——~450————QRF
Tin TellurideSnTe780D6.48——~450————QRF
TitaniumTi1,660—4.51,0671,2351,453ExW——TiCDCAlloys with W/Te/Mo; evolves gas on first heating
Titanium (II) OxideTiO1,750—4.93——~1,500GW, Mo——VCRFPreheat gently to outgas. n = 2.2
Titanium (III) OxideTi2O32,130D4.6———GW———RFDecomposes
Titanium (IV) OxideTiO21,830—4.26——~1,300FW, Mo—W—RF, RF-RSuboxide, must be reoxidized to rutile. Ta reduces TiO2 to TiO and Ti. n = 2.616, 2.903
Titanium BorideTiB22,900—4.5———P————RF
Titanium CarbideTiC3,140—4.93——~2,300—————RF
Titanium NitrideTiN2,930—5.22———GMo———RF, RF-RSputtering preferred. Decomposes with thermal evaporation.
TungstenW3,410—19.352,1172,4072,757G————DCForms volatile oxides. Films hard and adherent.
Tungsten BorideWB2~2,900—10.77———P————RF
Tungsten CarbideW2C2,860—17.151,4801,7202,120ExC———RF
Tungsten DisulfideWS21,250D7.5————————RF
Tungsten OxideWO31,473S7.16——980GW, Pt———RF-RPreheat gently to outgas. W reduces oxide slightly. n = 1.68
Tungsten SelenideWSe2——9————————RF
Tungsten SilicideWSi2>900—9.4————————RF
Tungsten TellurideWTe2——9.49———————QRF
UraniumU1,132—19.051,1321,3271,582GMo, WWW——Films oxidize
Uranium (II) SulfideUS>2,000—10.87—————————
Uranium (III) OxideU2O31,300D8.3————W—W—RF-RDisproportionates at 1,300° C to UO2
Uranium (IV) OxideUO22,878—10.96————W—W—RFTa causes decomposition
Uranium (IV) SulfideUS2>1,100—7.96————W———RFSlight decomposition
Uranium CarbideUC22,350—11.28——2,100————CRFDecomposes
Uranium FluorideUF4960—6.7——300—Ni———RF
Uranium PhosphideUP2——8.57——1,200—Ta———RFDecomposes
VanadiumV1,890—5.961,1621,3321,547ExW, Mo———DCWets Mo. E-beam-evaporated films preferred. n = 3.03
Vanadium (IV) OxideVO21,967S4.34——~575—————RF, RF-RSputtering preferred.
Vanadium (V) OxideV2O5690D3.36——~500————QRFn = 1.46, 1.52, 1.76
Vanadium BorideVB22,400—5.1————————RF
Vanadium CarbideVC2,810—5.77——~1,800—————RF
Vanadium NitrideVN2,320—6.13————————RF, RF-R
Vanadium SilicideVSi21,700—4.42————————RF
YtterbiumYb819S6.96520590690GTa————
Ytterbium FluorideYbF31,157————~800—Mo———RF
Ytterbium OxideYb2O32,346S9.17——~1,500—Ir———RF, RF-RLoses oxygen
YttriumY1,522—4.478309731,157ExW, TaWWAl2O3RF, DCHigh Ta solubility
Yttrium Aluminum OxideY3Al5O121,990—————G—WW—RFFilms not ferroelectric
Yttrium FluorideYF31,387—4.01————————RF
Yttrium OxideY2O32,410—5.01——~2,000GW——CRF, RF-RLoses oxygen; films smooth and clear. n = 1.79
ZincZn420—7.14127177250ExMo, W, TaWWAl2O3, QDCEvaporates well under wide range of conditions
Zinc AntimonideZn3Sb2570—6.33————————RF
Zinc BromideZnBr2394—4.2——~300—W——CRFDecomposes. n= 1.545
Zinc FluorideZnF2872—4.95——~800—Pt, Ta——QRF
Zinc NitrideZn3N2——6.22————Mo———RFDecomposes
Zinc OxideZnO1,975—5.61——~1,800F————RF-Rn = 2.008, 2.029
Zinc SelenideZnSe>1,100—5.42——660—Ta, W, MoW, MoW, MoQRFPreheat gently to outgas. Evaporates well. n = 2.89
Zinc SulfideZnS1,700S3.98——~800GTa, Mo———RFPreheat gently to outgas. Films partially decompose. n = 2.356
Zinc TellurideZnTe1,239—6.34——~600—Mo, Ta———RFPreheat gently to outgas. n = 3.56
ZirconiumZr1,852—6.491,4771,7021,987ExW———DCAlloys with W. Films oxidize readily.
Zirconium BorideZrB2~3,200—6.09———G————RF
Zirconium CarbideZrC3,540—6.73——~2,500—————RF
Zirconium NitrideZrN2,980—7.09————————RF, RF-RReactively evaporate in 10-3 Torr N2.
Zirconium OxideZrO2~2,700—5.89——~2,200GW———RF, RF-RFilms oxygen deficient, clear and hard. n = 2.13, 2.19, 2.20
Zirconium SilicateZrSiO42,550—4.56————————RFn = 1.92–1.96; 1.97–2.02
Zirconium SilicideZrSi21,700—4.88————————RF